Title :
SiC photodetectors for industrial applications
Author :
Sandvik, Peter ; Burr, Kent ; Soloviev, Stanislav ; Arthur, Stephen ; Matocha, Kevin ; Kretchmer, James ; Lombardo, Leo ; Brown, Dale
Author_Institution :
GE Global Res. Center, Niskayuna, NY, USA
Abstract :
Silicon carbide is a wide bandgap semiconductor with highly robust properties lending its applicability to robust electronics and sensors. Ultraviolet detection in particular is of interest for several industrial applications including those requiring a rugged sensing device. SiC photodetectors and their applications will be discussed, including examples of device design, fabrication and testing. Also, the fabrication and testing of separate avalanche and multiplication region avalanche photodiodes will be highlighted.
Keywords :
avalanche photodiodes; optical design techniques; optical fabrication; photodetectors; semiconductor device testing; silicon compounds; ultraviolet detectors; wide band gap semiconductors; SiC; SiC photodetectors; avalanche photodiodes; device design; device fabrication; device testing; ultraviolet detection; Avalanche photodiodes; Fabrication; Gallium nitride; Optical filters; Photodetectors; Robustness; Silicon carbide; Temperature sensors; Testing; Wide band gap semiconductors;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1547999
