مرکز منطقه ای اطلاع رساني علوم و فناوري - Bias Field And End Effects On The Switching Thresholds Of "Pseudo Spin Valve" Memory Cells

DocumentCode :

2632491

Title :

Bias Field And End Effects On The Switching Thresholds Of "Pseudo Spin Valve" Memory Cells

Author :

Pohm, A.V. ; Everitt, B.A. ; Beech, R.S. ; Daughton, J.M.

Author_Institution :

Nonvolatile Electronics

fYear :

1997

fDate :

1-4 April 1997

Keywords :

Copper; Giant magnetoresistance; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Magnetic materials; Magnetic separation; Perpendicular magnetic anisotropy; Spin valves; Switches;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Magnetics Conference, 1997. Digests of INTERMAG '97., 1997 IEEE International

Conference_Location :

New Orleans, LA, USA

Print_ISBN :

0-7803-3862-6

Type :

conf

DOI :

10.1109/INTMAG.1997.597555

Filename :

597555

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2632491