Title :
On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers
Author :
Hild, K. ; Sweeney, S.J. ; Lock, D.A. ; Wright, S. ; Wang, J.-B. ; Johnson, S.R. ; Zhang, Y.-H.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford
Abstract :
In spite of the almost ideal variation of the radiative current of 1.3 mum GaAsSb/GaAs-based lasers, the threshold current, Jth, is high due to non-radiative recombination accounting for 90% Jth near room temperature. This also gives rise to low T0 values ~60 K close to room temperature, similar to that for InGaAsP/InP
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; laser cavity resonators; semiconductor lasers; surface emitting lasers; thermal stability; 1.3 mum; 293 to 298 K; 60 K; GaAsSb-GaAs; GaAsSb/GaAs-based lasers; VCSEL; nonradiative recombination; radiative current; room temperature; thermal stability; threshold current; Gallium arsenide; Laser stability; Quantum dot lasers; Radiative recombination; Surface emitting lasers; Temperature dependence; Temperature sensors; Thermal stability; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548013
