• DocumentCode
    2632701
  • Title

    On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers

  • Author

    Hild, K. ; Sweeney, S.J. ; Lock, D.A. ; Wright, S. ; Wang, J.-B. ; Johnson, S.R. ; Zhang, Y.-H.

  • Author_Institution
    Adv. Technol. Inst., Surrey Univ., Guildford
  • fYear
    2005
  • fDate
    22-22 Oct. 2005
  • Firstpage
    331
  • Lastpage
    332
  • Abstract
    In spite of the almost ideal variation of the radiative current of 1.3 mum GaAsSb/GaAs-based lasers, the threshold current, Jth, is high due to non-radiative recombination accounting for 90% Jth near room temperature. This also gives rise to low T0 values ~60 K close to room temperature, similar to that for InGaAsP/InP
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; laser cavity resonators; semiconductor lasers; surface emitting lasers; thermal stability; 1.3 mum; 293 to 298 K; 60 K; GaAsSb-GaAs; GaAsSb/GaAs-based lasers; VCSEL; nonradiative recombination; radiative current; room temperature; thermal stability; threshold current; Gallium arsenide; Laser stability; Quantum dot lasers; Radiative recombination; Surface emitting lasers; Temperature dependence; Temperature sensors; Thermal stability; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    0-7803-9217-5
  • Type

    conf

  • DOI
    10.1109/LEOS.2005.1548013
  • Filename
    1548013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2632701