Two-terminal resistive switches (memristors) for memory and logic applications

We review the recent progress on the development of two-terminal resistive devices (memristors). Devices based on solid-state electrolytes (e.g. a-Si) have been shown to possess a number of promising performance metrics such as yield, on/off ratio, switching speed, endurance and retention suitable for memory or reconfigurable circuit applications. In addition, devices with incremental resistance changes have been demonstrated and can be used to emulate synaptic functions in hardware based neuromorphic circuits. Device and SPICE modeling based on a properly chosen internal state variable have been carried out and will be useful for large-scale circuit simulations.