Title :
1,550-nm uncooled EA-modulator and EA/DFB for 10/40-Gbit/s low-power-consumption transceivers
Author :
Makino, S. ; Arimoto, H. ; Kitatani, T. ; Shinoda, K. ; Tsuchiya, T. ; Aoki, M. ; Sasada, N. ; Uchida, K. ; Naoe, K. ; Uomi, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo
Abstract :
New uncooled 1,550-nm InGaAlAs electroabsorption-modulators and their laser-integration technologies were developed for 10/40-Gbit/s small-form-factor modules. For the first time, 10-Gbit/s 40-km SMF transmission and 40-Gbit/s operation were achieved up to 85degC
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium compounds; indium compounds; optical communication equipment; optical fibre communication; transceivers; 10 Gbit/s; 1550 nm; 40 Gbit/s; 40 km; EA/DFB; InGaAlAs; InGaAlAs electroabsorption-modulators; laser-integration; small-form-factor modules; transceivers; uncooled EA-modulator; Chirp modulation; Conducting materials; Distributed feedback devices; Electrons; Laser feedback; Optical fiber communication; Optical materials; Temperature; Transceivers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548014
