Title :
On driving SiC power JFETs
Author :
Abuishmais, Ibrahim ; Basi, Supratim ; Undeland, Tore
Author_Institution :
Electr. Power Dept., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
Abstract :
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper investigates the influence of the gate drive on the switching characteristics of the device and design strategies highlighted.
Keywords :
junction gate field effect transistors; silicon compounds; SiC; gate drive; high temperature operation; power VJFET; switching characteristics; switching loss; voltage rating; Capacitance; Capacitors; Driver circuits; JFETs; Logic gates; Silicon carbide; Switches; Device characterization; JFET; SiC-device; new switching devices;
Conference_Titel :
Power Electronics and Motion Control Conference (EPE/PEMC), 2010 14th International
Conference_Location :
Ohrid
Print_ISBN :
978-1-4244-7856-9
DOI :
10.1109/EPEPEMC.2010.5606857
