Title :
Microwave Integrated Tunnel Diode Amplifiers for Broadband, High Performance Receivers
Author :
Okean, H.C. ; Meier, P.J.
Abstract :
A family of X-band thin-film microstrip tunnel diode amplifiers (TDA´s ) have been developed for use in broadband, high-performance receivers. These TDA´s exhibit half-octave bandwidth capability, with about 9-dB gain per stage over 8.0 to 11.5 GHz, 5.0 to 6.0 dB noise figure (using Ge tunnel diodes), and -14 to -17 dB output level at 1-dB gain compression (using GaAs tunnel diodes). This represents a considerable advance in performance with respect to previously reported MIC - TDA´s, shows a two-stage TDA, incluching an output isolator per stage.
Keywords :
Bandwidth; Broadband amplifiers; Diodes; Gallium arsenide; Isolators; Microstrip; Microwave amplifiers; Microwave integrated circuits; Noise figure; Transistors;
Conference_Titel :
Microwave Symposium Digest, 1971 IEEE GMTT International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/GMTT.1971.1122959
