Title :
Impact of program/erase stress induced hole current on data retention degradation for MONOS memories
Author :
Fujii, Shosuke ; Fujitsuka, Ryota ; Sekine, Katsuyuki ; Kusai, Haruka ; Sakuma, Kiwamu ; Koyama, Masato
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
We investigate the mechanism for the data retention degradation caused by program/erase (P/E) cycling in MONOS memories, using the carrier separation measurement to identify the carrier type of Stress-Induced Leakage Current (SILC). It is thereby found that SILC is composed mainly of holes for the MONOS with less Si-rich SiN layer (hole SILC). A clear correlation is also discovered between hole SILC and interface states generated during P/E cycle. We also discuss the mechanism of the degradation by hole SILC of the data retention characteristics of MONOS devices.
Keywords :
leakage currents; random-access storage; silicon compounds; MONOS device; MONOS memories; Si-rich SiN layer; SiN; carrier separation measurement; data retention degradation; hole SILC; interface state; program-erase cycling; program-erase stress induced hole current; stress-induced leakage current; Charge carrier processes; Degradation; Interface states; MONOS devices; Photonic band gap; Silicon; Silicon compounds; Charge-separation; Cycling degradation; Data Retention; Hole current; MONOS; SILC; TANOS; recombination; trap-detrap;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241772
