Detection efficiencies for InP, InAlAs, and InAlAs-InP single-photon avalanche photodiodes

Author

Ramirez, David A. ; Hayat, Majeed M. ; Karve, Gauri ; Campbell, Joe C. ; Torres, Sergio N. ; Saleh, Bahaa E A ; Teich, Malvin C.

fYear

2005

fDate

22-22 Oct. 2005

Firstpage

387

Lastpage

388

Abstract

In this paper, theoretical results on the dependence of the single-photon quantum efficiency (SPQE) on the type of material of the multiplication region (MR) as well as its structure and width are presented. We consider SPADs with hole-injection InP MRs, electron-injection In_0.52Al_0.48As MRs, and hole-injection In_0.52Al_0.48As-InP heterojunction I ²E MRs. The model uses generalized breakdown probabilities based on the hard-threshold dead-space multiplication theory. The main mechanism for dark-carrier generation considered in this paper is tunneling current, which dominates other sources of dark carriers at the high electric fields beyond breakdown

Keywords

avalanche photodiodes; indium compounds; photodetectors; tunnelling; In_0.52Al_0.48As; In_0.52Al_0.48As-InP; In_0.52Al_0.48As-InP heterojunction I²E MR; SPQE; dark-carrier generation; detection efficiencies; electron-injection In_0.52Al_0.48As MR; hole-injection InP MR; multiplication region; single-photon avalanche photodiodes; single-photon quantum efficiency; tunneling current; Artificial satellites; Avalanche breakdown; Avalanche photodiodes; Electric breakdown; Heterojunctions; Indium compounds; Indium phosphide; Optimized production technology; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548033

Filename

1548033