Title :
Reliability of AlGaN/GaN HEMTs; An overview of the results generatedunder the ONR DRIFT program
Author :
Mishra, Umesh K.
Author_Institution :
Univ. of California, Santa Barbara, CA, USA
Abstract :
Under the ONR DRIFT program a large amount of coordinated work from some of the best groups in the US and Europe has resulted in an unprecedented level of understanding of the degradation mechanisms in AlGaN/GaN HEMTs. The scope of the program is vast and so in this paper only some of the methodologies employed and outcomes of the research will be summarized.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; Europe; HEMT reliability; ONR DRIFT program; US; high electron mobility transistors; Aluminum gallium nitride; Degradation; Educational institutions; Gallium nitride; HEMTs; MODFETs; Stress;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241778
