Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs

Author

Sasikumar, A. ; Arehart, A. ; Ringel, S.A. ; Kaun, S. ; Wong, M.H. ; Mishra, U.K. ; Speck, J.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA

fYear

2012

fDate

15-19 April 2012

Abstract

DC stressing of molecular beam epitaxy (MBE)-grown high electron mobility transistors (HEMTs) is found to degrade device performance primarily due to increased defect/trap formation. Using constant drain-current deep level optical/transient spectroscopy (CI_D-DLOS/DLTS) methods, a specific virtual-gate related electron trap with energy E_C-0.45 eV was observed to increase in concentration following DC stressing. The enhanced formation of this defect correlates quantitatively with a stress-induced knee-walkout (performance-degradation) of the HEMT that manifests itself in the pulsed I-V measurements.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; wide band gap semiconductors; AlGaN-GaN; C_ID-DLOS-DLTS methods; MBE- grown HEMT; defect-trap formation; direct correlation; drain-current deep level optical-transient spectroscopy method; electric stress-induced degradation; electron volt energy 0.45 eV; molecular beam epitaxy-grown high electron mobility transistors; pulsed I-V measurements; specific trap formation; stress-induced knee-walkout; virtual-gate related electron trap; Aluminum gallium nitride; Degradation; Electron traps; Gallium nitride; HEMTs; Logic gates; MODFETs; Constant current deep level transient spectroscopy (CID-DLTS); DC stressing; constant current deep level optical spectroscopy (CID-DLOS); degradation; drain-lag; gallium nitride (GaN); high electron mobility transitor (HEMT); plasma assisted molecular beam epitaxy (PAMBE); reliability; traps;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241780

Filename

6241780