Oxidation smoothing of sidewall roughness in AlGaAs heterostructure waveguides

Author

Liang, Di ; Hall, Douglas C. ; Peake, Gregory M.

Author_Institution

Dept. of Electr. Eng., Notre Dame Univ., IN

fYear

2005

fDate

22-22 Oct. 2005

Firstpage

382

Lastpage

383

Abstract

A 10-100 fold reduction in sidewall roughness of etched AlGaAs ridge structures is demonstrated using a wet thermal oxidation process modified through addition of <1% O₂ to the N₂ carrier gas, potentially enabling high index contrast waveguides with ultra-low scattering loss for ring resonator and other photonics device applications

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; integrated optics; light scattering; optical losses; optical resonators; optical waveguides; oxidation; surface roughness; 10-100 fold reduction; AlGaAs; AlGaAs ridge structures; AlGaAs waveguides; N₂ carrier gas; etching; heterostructure waveguides; high index contrast waveguides; oxidation smoothing; photonics device applications; ring resonator; sidewall roughness; ultralow scattering loss; wet thermal oxidation; Dry etching; Electromagnetic scattering; Optical losses; Optical ring resonators; Oxidation; Particle scattering; Propagation losses; Semiconductor waveguides; Smoothing methods; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548038

Filename

1548038