1.1 /spl mu/m range InGaAs VCSELs for high-speed optical interconnections

Author

Suzuki, N. ; Hatakeyama, H. ; Tokutome, K. ; Yamada, M. ; Anan, T. ; Tsuji, M.

Author_Institution

NEC Syst. Device Res. Labs., NEC Corp., Otsu

fYear

2005

fDate

22-22 Oct. 2005

Firstpage

394

Lastpage

395

Abstract

Vertical cavity surface emitting lasers (VCSELs) for optical interconnections operating at 1.07 mum have been developed. Active layers of the devices are InGaAs/GaAs MQWs, which are suitable for high-speed operation and high reliability. The devices exhibit -3 dB modulation bandwidths up to 19 GHz and no degradation under 70degC 1000 hour APC tests

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; laser cavity resonators; optical interconnections; optical modulation; quantum well lasers; semiconductor device reliability; surface emitting lasers; 1.07 mum; 1.1 mum; 1000 hour; 19 GHz; 70 degC; APC tests; InGaAs VCSEL; InGaAs-GaAs; InGaAs/GaAs MQW; device reliability; high-speed operation; optical interconnections; vertical cavity surface emitting lasers; Bandwidth; Distributed Bragg reflectors; Energy consumption; Gallium arsenide; Indium gallium arsenide; Optical interconnections; Power system interconnection; Power system reliability; Testing; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548044

Filename

1548044