Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 /spl mu/m with side-mode suppression ratio > 30 dB

Author

Chang, Y.H. ; Lin, G.R. ; Kuo, H.C. ; Chi, Jim Y. ; Wang, S.C.

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsin-Tsu

fYear

2005

fDate

22-22 Oct. 2005

Firstpage

400

Lastpage

401

Abstract

We present monolithically quantum-dot vertical-cavity surface-emitting laser (QD VCSELs) operating in the 1.3 mum optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is ~ 330 muW with slope efficiency of 0.18 W/A at room temperature. Single mode operation was obtained with side-mode suppression ratio of > 30 dB

Keywords

integrated optoelectronics; laser cavity resonators; laser modes; monolithic integrated circuits; optical fibre communication; quantum dot lasers; surface emitting lasers; 1.3 mum; 293 to 298 K; 330 muW; GaAs; GaAs substrate; fully doped structure; monolithically quantum-dot laser; optical communication wavelength; room temperature; side-mode suppression ratio; single mode operation; singlemode laser; vertical-cavity surface-emitting laser; Gallium arsenide; Laser modes; Optical fiber communication; Optical surface waves; Power generation; Quantum dots; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers; bandwidth; quantum dots; single mode; surface emitting laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548047

Filename

1548047