Title :
Electromigration degradation mechanism analysis of SnAgCu interconnects for eWLB package
Author :
Frank, T. ; Chappaz, C. ; Arnaud, L. ; Federspiel, X. ; Colella, F. ; Petitprez, E. ; Anghel, L.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
This paper focuses on electromigration of SnAgCu interconnects of Fanout embedded Wafer Level Ball Grid Array (FO-eWLB) technology. Black´s parameters are analyzed regarding stage of degradation through approaches based on resistance slope modeling and on Failure Criterion (FC).
Keywords :
ball grid arrays; electromigration; failure analysis; integrated circuit interconnections; wafer level packaging; Black parameter analysis; SnAgCu; SnAgCu interconnect; eWLB package; electromigration degradation mechanism analysis; failure criterion; fanout embedded wafer level ball grid array technology; resistance slope modeling; Current density; Degradation; Monitoring; Resistance; Temperature measurement; Temperature sensors; Tin; Electromigration; Intermetallic Compound (IMC); Redistribution Layer (RDL); SnAgCu; Solder ball;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241792
