• DocumentCode
    2633424
  • Title

    Goldilocks failures: Not too soft, not too hard

  • Author

    Nassif, Sani R. ; Kleeberger, Veit B. ; Schlichtmann, Ulf

  • Author_Institution
    Austin Res. Lab., IBM Corp., Austin, TX, USA
  • fYear
    2012
  • fDate
    15-19 April 2012
  • Abstract
    It is well known that circuits fail when one or more of the constituent components fails, due -for example- to phenomena such as electromigration in wires. Such hard failures, typically due to topological changes in circuit connectivity, are treated distinctly from soft failures which could be due to components drifting out of spec over time. However, in certain types of circuits, such as memory, the distinction between soft and hard failures is not clearly defined. The primary cause of the blurring between these two phenomena is manufacturing variability, which can make a topologically correct circuit behave as if it had a short or an open. This paper will show the linkage between these two failure types, and show how increasing variability in future technologies will likely exacerbate this problem further.
  • Keywords
    SRAM chips; failure analysis; integrated circuit reliability; SRAM; circuit failure; electromigration; goldilocks failures; hard failures; manufacturing variability; soft failures; static random access memory; wires; Clocks; Delay; Inverters; Latches; Manufacturing; Random access memory; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2012 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4577-1678-2
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2012.6241794
  • Filename
    6241794