DocumentCode :
2633424
Title :
Goldilocks failures: Not too soft, not too hard
Author :
Nassif, Sani R. ; Kleeberger, Veit B. ; Schlichtmann, Ulf
Author_Institution :
Austin Res. Lab., IBM Corp., Austin, TX, USA
fYear :
2012
fDate :
15-19 April 2012
Abstract :
It is well known that circuits fail when one or more of the constituent components fails, due -for example- to phenomena such as electromigration in wires. Such hard failures, typically due to topological changes in circuit connectivity, are treated distinctly from soft failures which could be due to components drifting out of spec over time. However, in certain types of circuits, such as memory, the distinction between soft and hard failures is not clearly defined. The primary cause of the blurring between these two phenomena is manufacturing variability, which can make a topologically correct circuit behave as if it had a short or an open. This paper will show the linkage between these two failure types, and show how increasing variability in future technologies will likely exacerbate this problem further.
Keywords :
SRAM chips; failure analysis; integrated circuit reliability; SRAM; circuit failure; electromigration; goldilocks failures; hard failures; manufacturing variability; soft failures; static random access memory; wires; Clocks; Delay; Inverters; Latches; Manufacturing; Random access memory; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2012.6241794
Filename :
6241794
Link To Document :
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