Title :
Usage-based degradation of SRAM arrays due to bias temperature instability
Author :
Bansal, Aditya ; Kim, Jae-Joon ; Rao, Rahul
Author_Institution :
Thomas J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
Abstract :
We propose a novel approach to estimate the workload based degradation of SRAM array stability with time due to NBTI (in PFETs) and PBTI (in NFETs). Goal is to obtain a realistic Vmin guard-band instead of optimistic (alternating stress) or pessimistic (static stress) assumptions. We also represent usage-based approach as stress-corner based approach to simplify the burn-in stress tests.
Keywords :
SRAM chips; field effect transistors; NBTI; NFET; PBTI; PFET; SRAM array stability; SRAM arrays; alternating stress; bias temperature instability; burn-in stress tests; optimistic assumptions; pessimistic assumptions; realistic Vmin guard-band; static stress; usage-based degradation; workload based degradation; Benchmark testing; Degradation; FETs; Probability; Random access memory; Stress; Thermal stability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241799
