Title :
The balanced photodetector buried with semi-insulating InP
Author :
Nakaji, Masaharu ; Ishimura, Eitaro ; Hanamaki, Yoshihiko ; Shimomura, Kenkichi ; Aoyagi, Toshitaka ; Ishikawa, Takahide
Author_Institution :
High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo
Abstract :
The well-balanced twin photodiodes with over 45 GHz bandwidth on one chip have been developed. It is realized by removing Si pile-up region due to contamination, which connects waveguide region and bonding pad electrically
Keywords :
III-V semiconductors; indium compounds; optical communication equipment; photodetectors; photodiodes; InP; bonding; photodetector; photodiodes; semiinsulating InP; waveguide region; Bandwidth; Bonding; Frequency response; High speed optical techniques; Indium phosphide; Nonlinear optics; Optical modulation; Optical waveguides; Photodetectors; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548069
