Title :
GaN power device and reliability for automotive applications
Author :
Kachi, Tetsu ; Kikuta, Daigo ; Uesugi, Tsutomu
Author_Institution :
Toyota Central R&D Labs., Inc., Nagakute, Japan
Abstract :
Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV) systems. For future development of the HV/EV, higher performances than Si power device, for example, low on-resistance, high speed, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Present status of the GaN power device development is presented. Reliability of the GaN power device was also discussed.
Keywords :
III-V semiconductors; automotive electronics; gallium compounds; hybrid electric vehicles; power semiconductor switches; semiconductor device reliability; wide band gap semiconductors; GaN; automotive applications; hybrid electric vehicle; power device; power switching devices; reliability; Films; Gallium nitride; Insulators; Logic gates; Performance evaluation; Reliability; Silicon; AlGaN/GaN; Avalanche resistance; EV; HV; Lateral device; Power device; Vertical device; gate insulator;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241815
