Title :
Growth of GaAs/InAs vertical nanowires on GaAs (111)b by metalorganic chemical vapor deposition
Author :
Kim, Yong ; Joyce, H.J. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; nanowires; semiconductor growth; GaAs; GaAs (111)B substrates; GaAs-InAs; GaAs/InAs vertical nanowires; crystallographic perfection; lattice mismatch; metalorganic chemical vapor deposition; Anisotropic magnetoresistance; Chemical vapor deposition; Crystallography; Gallium arsenide; Gold; Lattices; Nanowires; Shape; Substrates; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548075
