• DocumentCode
    2633885
  • Title

    Effects of channel hot carrier stress on III–V bulk planar MOSFETs

  • Author

    Wrachien, N. ; Cester, A. ; Bari, D. ; Zanoni, E. ; Meneghesso, G. ; Wu, Y.Q. ; Ye, P.D.

  • Author_Institution
    Dept. of Inf. Eng., Univ. of Padova, Padova, Italy
  • fYear
    2012
  • fDate
    15-19 April 2012
  • Abstract
    We performed channel hot carrier stress on enhancement-mode, inversion-type III-V MOSFETs with Al2O3 gate dielectric. The stress induces subthreshold swing degradation, increase on the threshold voltage and reduction of drain saturation current. Nonetheless, no appreciable transconductance degradation can be observed at least with a stress time as long as 105 s.
  • Keywords
    III-V semiconductors; MOSFET; alumina; dielectric materials; hot carriers; Al2O3; channel hot carrier stress; drain saturation current reduction; enhancement mode; gate dielectric; inversion type III-V bulk planar MOSFET; subthreshold swing degradation; threshold voltage; Current measurement; Degradation; Dielectrics; Electric breakdown; Logic gates; MOSFETs; Stress; Hot Carrier Stress; III–V MOSFET; reliability; stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2012 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4577-1678-2
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2012.6241818
  • Filename
    6241818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2633885