Title :
Engineering optimal high current characteristics of high voltage DENMOS
Author :
Salman, Akram A. ; Farbiz, Farzan ; Appaswamy, Aravind ; Kunz, Hans ; Boselli, Gianluca ; Dissegna, Mariano
Author_Institution :
Analog Technol. Dev. ESD Lab., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
This paper demonstrates the dramatic improvement in ESD performance of HV DENMOS and LDMOS obtained by using selective drain extension silicide blocking (SBLK). The results are validated through 3D TCAD and TLP measurements on different technologies. Measured D.C. Id-Vd characteristics show minimal performance impact due to the addition of SBLK region.
Keywords :
electrostatic discharge; power MOSFET; 3D TCAD; ESD performance; HV DENMOS; LDMOS; SBLK; TLP measurements; high voltage DENMOS; optimal high current characteristics; selective drain extension silicide blocking; Current density; Current distribution; Electrostatic discharges; Performance evaluation; Silicides; Stress; Current Filament; DENMOS/LDMOS; ESD; Silicide Block;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241819
