• DocumentCode
    2633904
  • Title

    Engineering optimal high current characteristics of high voltage DENMOS

  • Author

    Salman, Akram A. ; Farbiz, Farzan ; Appaswamy, Aravind ; Kunz, Hans ; Boselli, Gianluca ; Dissegna, Mariano

  • Author_Institution
    Analog Technol. Dev. ESD Lab., Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2012
  • fDate
    15-19 April 2012
  • Abstract
    This paper demonstrates the dramatic improvement in ESD performance of HV DENMOS and LDMOS obtained by using selective drain extension silicide blocking (SBLK). The results are validated through 3D TCAD and TLP measurements on different technologies. Measured D.C. Id-Vd characteristics show minimal performance impact due to the addition of SBLK region.
  • Keywords
    electrostatic discharge; power MOSFET; 3D TCAD; ESD performance; HV DENMOS; LDMOS; SBLK; TLP measurements; high voltage DENMOS; optimal high current characteristics; selective drain extension silicide blocking; Current density; Current distribution; Electrostatic discharges; Performance evaluation; Silicides; Stress; Current Filament; DENMOS/LDMOS; ESD; Silicide Block;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2012 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4577-1678-2
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2012.6241819
  • Filename
    6241819
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2633904