DocumentCode :
2633987
Title :
Design and fabrication of SiGe MEMS structures with high intrinsic ESD robustness
Author :
Sangameswaran, Sandeep ; Cherman, Vladimir ; De Coster, Jeroen ; Witvrouw, Ann ; Groeseneken, Guido ; De Wolf, Ingrid
Author_Institution :
Imec, Heverlee, Belgium
fYear :
2012
fDate :
15-19 April 2012
Abstract :
The mechanical response of electrostatically-actuated MEMS to ESD stress leads to contact breakdown or to discharges across micro-gaps. This is the root cause of most MEMS failures under ESD stress. This paper discusses improvement of the intrinsic ESD robustness of SiGe MEMS from Class0 (<;250V) to more than Class1 (>;500V), through smart design variations and higher mechanical stiffness. A MEMS-based one-time ESD-protection fuse with pre-defined trigger voltage is shown as an application.
Keywords :
Ge-Si alloys; electrostatic discharge; micromechanical devices; MEMS failure; MEMS-based one-time ESD-protection fuse; SiGe; SiGe MEMS structure design; SiGe MEMS structure fabrication; contact breakdown; electrostatically-actuated MEMS; high intrinsic ESD robustness; mechanical response; mechanical stiffness; predefined trigger voltage; smart design variation; Electrodes; Electrostatic discharges; Fuses; Micromechanical devices; Robustness; Silicon germanium; Stress; ESD; ESD protection; MEMS; Reliability; Robustness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2012.6241822
Filename :
6241822
Link To Document :
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