DocumentCode :
2633998
Title :
NEMS based logic and memory circuits
Author :
Jae Eun Jang ; Amaratunga, G.A.J.
Author_Institution :
Dept. of Inf. & Commun. Eng., Daegu Gyeongbuk Inst. of Sci. & Technol. (DGIST), Daegu, South Korea
fYear :
2012
fDate :
15-19 April 2012
Abstract :
Carbon nanotube (CNT) based nano electromechanical system (NEMS) were developed to apply to the logic and the memory circuit. The electrical `on-off´ behavior induced by the mechanical movements of CNTs can promise low power consumption in circuit with very low level leakage current. Additionally, the unique vertical structure of nanotubes allows high integration density for devices.
Keywords :
carbon nanotubes; leakage currents; logic circuits; nanoelectromechanical devices; storage management chips; C; CNT; NEMS based logic circuits; carbon nanotube; low level leakage current; low power consumption; memory circuits; nanoelectromechanical system; Capacitors; Electrodes; Force; Leakage current; Logic gates; Nickel; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2012.6241823
Filename :
6241823
Link To Document :
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