DocumentCode
2634202
Title
Effect Of Crystalline Anisotropy In Magnetoresistive Random Access Memory Cells
Author
Gadbois, J.B. ; Zhu, J-G.
Author_Institution
University of Minnesota,
fYear
1997
fDate
1-4 April 1997
Keywords
Anisotropic magnetoresistance; Crystalline materials; Crystallization; Magnetic anisotropy; Magnetic materials; Magnetization; Magnetostatics; Perpendicular magnetic anisotropy; Random access memory; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 1997. Digests of INTERMAG '97., 1997 IEEE International
Conference_Location
New Orleans, LA, USA
Print_ISBN
0-7803-3862-6
Type
conf
DOI
10.1109/INTMAG.1997.597564
Filename
597564
Link To Document