Title :
Low-driving-voltage LiNbO3 optical modulators with millimeter-wave bandwidths
Author_Institution :
NGK Insulators Ltd., Aichi, Japan
Abstract :
Traveling-wave-type LN modulator structures, which achieve a low driving voltage and a large bandwidth, have been presented. As a result, under the velocity match conditions, a higher performance LN modulator can be obtained by utilizing a wider gap or a thinner buffer layer for the ridged z-cut LN substrate, and by utilizing a wider center electrode or a narrower gap for the thinned x-cut LN substrate. These LN modulators are expected to have a sufficient capability for use in millimeter-wave-band optoelectronic systems.
Keywords :
electro-optical modulation; integrated optoelectronics; lithium compounds; microwave photonics; millimetre wave devices; LiNbO3; LiNbO3 optical modulators; buffer layer; center electrode; large-bandwidth modulator; low-driving-voltage modulators; millimeter-wave bandwidths; millimeter-wave-band optoelectronic systems; ridged z-cut LN substrate; thinned x-cut LN substrate; traveling-wave-type modulator; velocity match conditions; Buffer layers; Chirp modulation; Conductors; Electrodes; High speed optical techniques; Optical attenuators; Optical buffering; Optical modulation; Optical refraction; Optical variables control;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548099
