Title :
Effects of charge confinement and angular strikes in 40 nm dual- and triple-well bulk CMOS SRAMs
Author :
Chatterjee, Indranil ; Bhuva, Bharat L. ; Schrimpf, Ronald D. ; Narasimham, Balaji ; Wang, J.K. ; Bartz, B. ; Pitta, E. ; Buer, M.
Author_Institution :
Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Heavy-ion induced upsets are compared in dual-well and triple-well 40 nm CMOS SRAMs. Charge confinement in triple-well structures triggers the single-event upset reversal mechanism for high LET particles. Due to upset reversal, high LET ion-hits incident at off-normal angles show a decrease in SER compared to normally-incident ions for triple-well SRAM cells.
Keywords :
CMOS memory circuits; SRAM chips; LET particles; SER; angular strikes; charge confinement effect; dual-well bulk CMOS SRAM cell; heavy-ion induced upsets; off-normal angles; single-event upset reversal mechanism; size 40 nm; triple-well bulk CMOS SRAM cell; triple-well structures; CMOS integrated circuits; CMOS technology; Ions; MOSFETs; Random access memory; Solid modeling; Dual well; Multi-node Charge Collection; Multiple Bit Upset; Reinforcing Charge Collection; SRAM; Single Bit Upset; Single Event Effects; Single Event Upset Reversal; Soft Error; Triple well;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241845
