Title :
A C-Band All Ferrite Integrated Wideband High Power GaAs Avalanche Diode Amplifier
Author :
Tsai, Wei C. ; Lee, Chong W.
Author_Institution :
Raytheon Co. Micro State-Special Microwave Devices Oper., Waltham, MA, USA
Abstract :
A C-band 4-stage, 20 dB gain, 3-watt 25% bandwidth all ferrite substrate integrated GaAs avalanche diode amplifier is developed. The design procedure, as well as the amplifier performance including amplifier phase characteristics, is described. A power combining circuit which increases the output power capability by a factor of two is included in the output stage.
Keywords :
III-V semiconductors; avalanche diodes; ferrites; gallium arsenide; microwave power amplifiers; wideband amplifiers; C-band 4-stage amplifier; GaAs; GaAs avalanche diode amplifier; all ferrite amplifier; all ferrite substrate; amplifier phase characteristics; gain 20 dB; integrated wideband high power amplifier; power 3 W; power combining circuit; Bandwidth; Broadband amplifiers; Circuits; Diodes; Ferrites; Gain; Gallium arsenide; High power amplifiers; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium, 1972 IEEE GMTT International
Conference_Location :
Arlington Heights, IL
DOI :
10.1109/GMTT.1972.1123038
