Author :
Heyns, M. ; Alian, A. ; Brammertz, G. ; Caymax, M. ; Eneman, G. ; Franco, J. ; Gencarelli, F. ; Groeseneken, G. ; Hellings, G. ; Hikavyy, A. ; Houssa, M. ; Kaczer, B. ; Lin, D. ; Loo, R. ; Merckling, C. ; Meuris, M. ; Mitard, J. ; Nyns, L. ; Sioncke, S. ;
Author_Institution :
MTM, K.U. Leuven, Leuven, Belgium
Abstract :
High mobility channel materials and new device structures will be needed to meet the power and performance specifications in future technology nodes. In these new material systems and devices various electrically active defects are present at or close to the interface between the high-k dielectric and the alternative channel material which are a major concern for both the performance and the reliability of these new devices.
Keywords :
CMOS integrated circuits; III-V semiconductors; carrier mobility; elemental semiconductors; germanium; quantum well devices; CMOS technologies; alternative channel material; device performance; device reliability; device structures; electrically active defects; high mobility channel materials; high-k dielectric material; new material systems; technology nodes; Aluminum oxide; Logic gates; Passivation; Silicon; Substrates; CMOS; Germanium; III/V; defects;
