GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm

Author

Lott, J.A. ; Stintz, A. ; Kovsh, A.R. ; Ledentsov, N.N.

Author_Institution

Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA

fYear

2005

fDate

22-28 Oct. 2005

Firstpage

533

Lastpage

534

Abstract

This study presents the design and performance of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) in a bipolar cascade configuration. The experimental VCSELs are grown by molecular beam epitaxy and consist of highly reflective Al_xGa_1-xAs (x = 0.0 and x = 0.9) doped DBR mirrors on a GaAs substrate, surrounding a GaAs-based microcavity active region containing stacks of InAs/InGaAs QDs.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; microcavity lasers; molecular beam epitaxial growth; quantum dot lasers; reflectivity; self-assembly; surface emitting lasers; 1300 nm; Al_xGa_1-xAs doped mirrors; DBR mirrors; GaAs; GaAs-based VCSEL; GaAs-based active region; GaAs-based microcavity; InAs-InGaAs; InAs/InGaAs quantum dot VCSEL; bipolar cascade VCSEL; highly reflective mirrors; molecular beam epitaxy; self-assembled quantum dot; vertical cavity surface emitting lasers; Distributed Bragg reflectors; Indium gallium arsenide; Mirrors; Molecular beam epitaxial growth; Optical design; Quantum cascade lasers; Quantum dot lasers; Quantum dots; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548114

Filename

1548114