Title :
Design Considerations of a 3.1 - 3.5 GHz GaAs FET Feedback Amplifier
Author_Institution :
Fairchild Microwave & Optoelectron., Palo Alto, CA, USA
Abstract :
Recent GaAs FET devices have exhibited promising capabilities for microwave amplification. Circuit designers, however, found two problems with the FET applications, namely, the characteristically high input/output impedances are difficult to match into a 5Ω system and the potential instabilities that exists at frequencies below 4 GHz. This paper describes development work done on feedback circuits in designing an unconditionally stable FET amplifier in the 3.1-3.5 GHz frequency range by using conventional microstrip techniques, and also investigates the effect of feedback components on noise and output capabilities.
Keywords :
III-V semiconductors; feedback amplifiers; gallium arsenide; microstrip circuits; microwave amplifiers; microwave field effect transistors; network synthesis; FET feedback amplifier; GaAs; feedback circuits; feedback components; frequency 3.1 GHz to 3.5 GHz; microstrip technique; microwave amplification; stable FET amplifier; Bipolar transistors; Feedback amplifiers; Feedback circuits; Frequency; Gallium arsenide; Impedance; Microwave FETs; Microwave amplifiers; Microwave devices; Output feedback;
Conference_Titel :
Microwave Symposium, 1972 IEEE GMTT International
Conference_Location :
Arlington Heights, IL
DOI :
10.1109/GMTT.1972.1123056
