Title :
A 0.1-W CMOS class-E power amplifier for Bluetooth applications
Author :
Luengvongsakorn, Phairoj ; Thanachayanont, Apinunt
Author_Institution :
Commun. & Inf. Technol., King Mongkut´´s Inst. of Technol., Ladkrabang, Thailand
Abstract :
This paper describes the design of a CMOS class-E RF power amplifier for Bluetooth applications in a standard 0.35-μm CMOS technology. Simulation results using Spectre with MOS level 49 parameters show that the power amplifier can deliver 100 mW output power to 50-Ω load at 2.4 GHz with 64% drain efficiency and 59% power-added-efficiency respectively under a single supply voltage of 2.5 V.
Keywords :
Bluetooth; CMOS integrated circuits; UHF power amplifiers; system-on-chip; 100 mW; 2.4 GHz; 2.5 V; 59 percent; 64 percent; Bluetooth applications; CMOS class-E power amplifier; bondwire inductors; complementary metal-oxide-semiconductor; on-chip inductance; spiral inductors; Bluetooth; CMOS technology; Driver circuits; Inductors; Paper technology; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Spirals; Switches;
Conference_Titel :
TENCON 2003. Conference on Convergent Technologies for the Asia-Pacific Region
Print_ISBN :
0-7803-8162-9
DOI :
10.1109/TENCON.2003.1273136
