• DocumentCode
    2634873
  • Title

    Electromigration recovery and short lead effect under bipolar- and unipolar-pulse current

  • Author

    Lee, Ki-Don

  • Author_Institution
    CMOS Dev. Reliability, Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2012
  • fDate
    15-19 April 2012
  • Abstract
    Electromigration (EM) of Copper interconnects is studied under unipolar pulse current (UPC) at 1.25 kHz ~ 1.25 MHz and bipolar pulse current (BPC) at 100 kHz ~ 5.0 MHz. For symmetric BPC, where a time-averaged current density (Javg) is 0, we found interconnect failures by EM-induced void formation. This means EM is not fully recovered during the opposite-polarity pulse current. The degree of EM recovery is found to be 0.7 ~ 0.9, where 1 is for full-recovery. Also, the short lead EM effect is investigated under UPC. We found short lead EM lifetimes are modeled by peak current density (Jpeak), instead of Javg. Also, we observed, during the off-time between low frequency pulse currents, mechanical back-stress may reduce the stress gradient built by UPC and increase the EM lifetimes of the short leads.
  • Keywords
    current density; electromigration; optical pulse generation; bipolar-pulse current; copper interconnects; electromigration recovery; frequency 1.25 MHz; frequency 1.25 kHz; frequency 100 kHz; interconnect failures; low frequency pulse currents; mechanical back-stress; peak current density; short lead effect; symmetric BPC; time-averaged current density; unipolar-pulse current; Copper; Current density; Electromigration; Heating; Reliability; Stress; AC EM; Bipolar Pulse Current; EM Recovery; Electromigration; Short Lead EM; Unipolar Pulse Current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2012 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4577-1678-2
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2012.6241869
  • Filename
    6241869