DocumentCode
2635032
Title
Backend dielectric chip reliability simulator for complex interconnect geometries
Author
Chen, Chang-Chih ; Bashir, Muhammad ; Milor, Linda ; Kim, Dae Hyun ; Lim, Sung Kyu
Author_Institution
Sch. of Electr. & Comptuer Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2012
fDate
15-19 April 2012
Abstract
Backend dielectric breakdown degrades the reliability of circuits. We present test data and a methodology to estimate chip lifetime due to backend dielectric breakdown. Our methodology incorporates failures due to parallel tracks, the width effect, and field enhancement due to line ends. The impact of line ends has been found to be very significant experimentally, and it is demonstrated that this component can dominate the failure rate of the chip due to dielectric breakdown.
Keywords
circuit reliability; electric breakdown; backend dielectric breakdown; backend dielectric chip reliability simulator; chip lifetime; circuit reliability; complex interconnect geometry; failure rate; parallel track; width effect; Dielectric breakdown; Dielectrics; Equations; Geometry; Layout; Mathematical model; Reliability; TDDB; chip lifetime; dielectric breakdown; irregular interconnect geometries; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4577-1678-2
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2012.6241878
Filename
6241878
Link To Document