DocumentCode
2635103
Title
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs
Author
Chini, A. ; Di Lecce, V. ; Soci, F. ; Bisi, D. ; Stocco, A. ; Meneghini, M. ; Meneghesso, G. ; Zanoni, E. ; Gasparotto, A.
Author_Institution
Dept. of Inf. Eng., Univ. of Modena & Reggio Emilia, Modena, Italy
fYear
2012
fDate
15-19 April 2012
Abstract
In this work, for the first time, the dependence of the GaN HEMTs current collapse from the profile of the Fe-doped semi-insulating GaN buffers has been demonstrated both experimentally and by means of numerical simulations based on the SIMS measured profile of the GaN buffer Fe-doping concentration.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; iron; numerical analysis; semiconductor doping; wide band gap semiconductors; GaN:Fe; HEMT; SIMS measurement profile; current-collapse; doping concentration; numerical correlation simulation; semiinsulating buffer; Current measurement; Gallium nitride; HEMTs; Iron; MODFETs; Numerical simulation; Transient analysis; GaN; power FET;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4577-1678-2
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2012.6241881
Filename
6241881
Link To Document