Title :
Dislocation engineered silicon for light emission
Author :
Homewood, K.P. ; Lourengo, M.A. ; Milosavljevic, M. ; Shao, G. ; Gwilliam, R.M.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford
Abstract :
The paper outlined a new approach on dislocation engineering to make efficient light emitting diodes in silicon using otherwise conventional silicon processing. DELED (dislocation engineered light emitting diodes)was fabricated with erbium incorporated in the active region. Progress on tuning these devices from 1.5 to 1.6 mum by incorporation of additional optically active centres was demonstrated
Keywords :
dislocations; elemental semiconductors; light emitting diodes; optical fabrication; optical tuning; silicon; DELED; Si; dislocation engineering; light emitting diodes; optically active centres; silicon; silicon processing; Erbium; Iron; Light emitting diodes; Luminescence; Optical materials; Photonic band gap; Silicon; Stimulated emission; Temperature; Thermal quenching;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548152
