Title :
The Tungsten - P Type Silicon Point Contact Diode
Author :
Kerecman, Albert J.
Abstract :
Video detection at 90 GHz, 890 GHz, 28.3 THz, and 474 THz is examined with respect to whisker advancement. Reproducible behavior of I-V curves is obtained and correlated with the RF data. A significant thermal effect is shown to compete with conventional barrier rectification. Micrographic analysis coupled with microhardness measurements clearly demonstrates that the tungsten whisker exerts sufficient pressure to deform the silicon surface of the diodes.
Keywords :
Capacitance; Contacts; Electrons; Equivalent circuits; Etching; Schottky diodes; Semiconductor diodes; Silicon; Tungsten; Voltage;
Conference_Titel :
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location :
Boulder, CO, USA
DOI :
10.1109/GMTT.1973.1123080
