DocumentCode :
2635329
Title :
Highly efficient blue to red emissions of InGaN/GaN nano-disks integrated into GaN nanocolumns
Author :
Kishino, Katsumi ; Kikuchi, Akihiko
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
fYear :
2005
fDate :
22-22 Oct. 2005
Firstpage :
631
Lastpage :
632
Abstract :
InGaN/GaN- multiple quantum disk (MQD) nanocolumn LEDs were fabricated on n-type (111) Si substrates. In the growth, after irradiating a Ga beam onto the substrate surface, rf-plasma-excited nitrogen was irradiated to form GaN dots, both at 530 degC. Green to red bright light emission was observed through the transparent electrode under the direct current operation at room temperature
Keywords :
gallium compounds; indium compounds; nanostructured materials; nanotechnology; optical fabrication; GaN nanocolumns; InGaN-GaN; InGaN/GaN nanodisks; LED; blue-red emissions; multiple quantum disk; rf-plasma-excitation; Crystals; Degradation; Gallium nitride; Light emitting diodes; Nanocrystals; Nanoscale devices; Optical films; Optical surface waves; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
Type :
conf
DOI :
10.1109/LEOS.2005.1548155
Filename :
1548155
Link To Document :
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