• DocumentCode
    2635364
  • Title

    Optimization of NH3 plasma surface treatment using Cu silicide formation for EM/SM improvement

  • Author

    Baek, Won-Chong ; Chowdhury, Naser ; Loi, Lan ; Kim, Hyeon-Seag ; Kim, Sungjin ; DelRosario, Amalia ; Adem, Ercan ; Tracy, Bryan ; Pak, James

  • Author_Institution
    Spansion Inc., Sunnyvale, CA, USA
  • fYear
    2012
  • fDate
    15-19 April 2012
  • Abstract
    Authors investigated optimization of NH3 plasma surface pre-clean treatment using Cu silicide formation in order to improve electromigration (EM) and stressmigration (SM). NH3 plasma treatment removed Cu oxide but also led to reduced Cu silicide at the Cu/capping layer interface. Despite Cu oxide removal, EM/SM was observed to degrade due to the reduction of Cu silicide. It was critical to restore Cu silicide at the interface when employing NH3 plasma treatment to improve EM/SM.
  • Keywords
    ammonia; copper compounds; electromigration; plasma applications; surface cleaning; Cu silicide formation; CuSix; EM/SM improvement; NH3; capping layer interface; electromigration; optimization; plasma surface preclean treatment; stressmigration; Conductivity; Plasma temperature; Silicides; Silicon; Stress; Surface treatment; Cu silicide; EM; NH3 plasma surface treatment; SM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2012 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4577-1678-2
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2012.6241895
  • Filename
    6241895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2635364