Title :
Design of monolithic image rejection mixer
Author :
Yan, Pinpin ; Hong, Wei ; Chen, Jixin
Author_Institution :
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
Abstract :
A image rejection mixer MMIC has been designed and implemented with 0.15μm GaAs pHEMT process, with the chip size of 1.36mm × 1.38mm. The mixer employs a balanced image rejection structure and resistive FET mixers. The measured conversion loss is less than 10.6dB in the frequency range of 24GHz to 40GHz and the image rejection is above 15dB.
Keywords :
III-V semiconductors; MMIC mixers; field effect transistors; gallium arsenide; integrated circuit design; GaAs; MMIC; balanced image rejection structure; frequency 24 GHz to 40 GHz; monolithic image rejection mixer; pHEMT process; resistive FET mixers; size 0.15 mum; GaAs; MMIC; image rejection mixer;
Conference_Titel :
Signals Systems and Electronics (ISSSE), 2010 International Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6352-7
DOI :
10.1109/ISSSE.2010.5607004
