DocumentCode
2635464
Title
Investigation on physical origins of endurance failures in PRAM
Author
Bae, J.S. ; Hwang, K.M. ; Park, K.H. ; Jeon, S.B. ; Choi, J. ; Ahn, J.H. ; Kim, S.S. ; Ahn, D. -H ; Jeong, H.S. ; Nam, S.W. ; Jeong, G.T. ; Cho, H.K. ; Jang, D.H. ; Park, C.-G.
Author_Institution
Semicond. R&D Center, Samsung Electron. Co. Ltd., Hwaseong, South Korea
fYear
2012
fDate
15-19 April 2012
Abstract
Endurance failures are classified into three groups, all of which originate from the atomic transport of GST due to electromigration in molten phase. Based on the analysis, cell structure insusceptible to the atomic transport and for better cycling performance was proposed.
Keywords
antimony compounds; electromigration; failure analysis; germanium compounds; phase change memories; GeSbTe; PRAM; atomic transport; cell structure; cycling performance; electromigration; endurance failures; molten phase; phase change random access memory; physical origins; Computer architecture; Electrodes; Electromigration; Phase change random access memory; Probes; Resistance; Tomography; Bias dependent atomic transport; Electromigration; GeSbTe; PRAM;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4577-1678-2
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2012.6241900
Filename
6241900
Link To Document