Title :
Investigation on physical origins of endurance failures in PRAM
Author :
Bae, J.S. ; Hwang, K.M. ; Park, K.H. ; Jeon, S.B. ; Choi, J. ; Ahn, J.H. ; Kim, S.S. ; Ahn, D. -H ; Jeong, H.S. ; Nam, S.W. ; Jeong, G.T. ; Cho, H.K. ; Jang, D.H. ; Park, C.-G.
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Hwaseong, South Korea
Abstract :
Endurance failures are classified into three groups, all of which originate from the atomic transport of GST due to electromigration in molten phase. Based on the analysis, cell structure insusceptible to the atomic transport and for better cycling performance was proposed.
Keywords :
antimony compounds; electromigration; failure analysis; germanium compounds; phase change memories; GeSbTe; PRAM; atomic transport; cell structure; cycling performance; electromigration; endurance failures; molten phase; phase change random access memory; physical origins; Computer architecture; Electrodes; Electromigration; Phase change random access memory; Probes; Resistance; Tomography; Bias dependent atomic transport; Electromigration; GeSbTe; PRAM;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241900
