Title :
The amplitude of random telegraph noise: Scaling implications
Author :
Cheung, Kin P. ; Campbell, J.P. ; Potbhare, S. ; Oates, A.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
We introduce a simple and intuitive model to relate the amplitude of random telegraph noise (RTN) fluctuations to the columbic influence of single trap charges on the inversion layer. The prediction of this model is in excellent agreement with results extracted from experiment using the “hole-in-the-inversion-layer” model for RTN amplitude. This new model allows us to quantitatively examine the impact of “worst-case” RTN in future scaling nodes.
Keywords :
noise; telegraphy; RTN amplitude; columbic influence; excellent agreement; hole-in-the-inversion-layer model; intuitive model; inversion layer; random telegraph noise fluctuation; scaling implication; single trap charges; Dielectrics; Fluctuations; Logic gates; Mathematical model; Noise; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241908
