A comparative study of gate stack material properties and reliability characterization in MOS transistors with optimal ALD Zirconia addition for hafina gate dielectric

Author

Chiang, C.K. ; Chang, J.C. ; Liu, W.H. ; Liu, C.C. ; Lin, J.F. ; Yang, C.L. ; Wu, J.Y. ; Chiang, C.K. ; Wang, S.J.

Author_Institution

Adv. Modules Div., United Microelectron. Corp., Tainan, Taiwan

fYear

2012

fDate

15-19 April 2012

Abstract

In this work, we investigate the influence of incorporation Zirconia (ZrO₂) in gate dielectric HfO₂ on electrical properties and the reliability of nMOSFET for the 28nm technology node. Detailed film physical, chemical and optical properties of Hf_1-xZr_xO₂ as a function of Zr content were studied using HRTEM, AR-XPS, spectroscopic ellipsometer. Compared to HfO₂, Hf_1-xZr_xO₂ provides lower C-V hysteresis, V_t shift (ΔV_t) and higher Time to Failure (TTF) lifetimes are achieved with Zr incorporation in an ALD Hf_1-xZr_xO₂/SiO2 gate stack. The improved reliability of the Hf_1-xZr_xO₂ gate dielectric is attributed to the reduced charge trapping in the Hf_1-xZr_xO₂ gate dielectric caused by the Zr incorporation.

Keywords

MOSFET; semiconductor device reliability; MOS transistors; charge trapping; gate stack material property; hafina gate dielectric; nMOSFET reliability characterization; optimal ALD zirconia addition; spectroscopic ellipsometer; Dielectrics; Films; Hafnium compounds; Logic gates; MOSFET circuits; Zirconium; HfZrOx; PBTI; TTF; high-k; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241910

Filename

6241910