Title :
Effect of interface states on 1T-FBRAM cell retention
Author :
Aoulaiche, M. ; Collaert, N. ; Blomme, P. ; Simoen, E. ; Altimime, L. ; Groeseneken, G. ; Jurczak, M. ; Almeida, L. Mendes ; Caillat, Ch ; Mahatme, N.N.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
In this work, the retention of 1T-RAM UTBOX SOI devices is investigated. It is found that the interface defects at 0.3eV below the Si conduction band are responsible for the short retention times. The measured retention time and kinetics are reproduced by a model assuming hole generation via interface states.
Keywords :
conduction bands; elemental semiconductors; interface states; random-access storage; silicon; silicon-on-insulator; time measurement; 1T-FBRAM cell retention; 1T-RAM UTBOX SOI devices; Si; conduction band; electron volt energy 0.3 eV; floating body RAM; hole generation; interface defects; interface states effect; retention time measurement; ultra thin buried oxide devices; Current measurement; Energy states; Interface states; Mathematical model; Silicon; Temperature measurement; Time measurement; 1T-RAM; SOI; UTBOX; floating body RAM; interface state; retention;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241918
