DocumentCode :
2635777
Title :
Room temperature Si laser at Si indirect-bandgap energy by electrical pumping
Author :
Lin, Ching-Fuh ; Liang, Eih-Zhe ; Huang, Chu-Ting ; Lin, Kung-An ; Shu, Shiu-Jia
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2005
fDate :
22-28 Oct. 2005
Firstpage :
672
Lastpage :
673
Abstract :
Room-temperature lasing actions from Si by continuous-wave electrical pumping are demonstrated. Nanoparticle-modified metal-oxide-Si structures is used. Lasing occurs at the Si indirect-bandgap energy with threshold current 56 mA.
Keywords :
MIS devices; elemental semiconductors; energy gap; nanoparticles; semiconductor lasers; silicon; silicon compounds; 293 to 298 K; 56 mA; Si; Si indirect-bandgap energy; Si laser; Si-SiO2; continuous-wave pumping; electrical pumping; metal-oxide-Si structures; nanoparticle; room temperature lasing; Laser excitation; Nanoparticles; Paints; Pump lasers; Silicon; Silver; Spontaneous emission; Stimulated emission; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
Type :
conf
DOI :
10.1109/LEOS.2005.1548184
Filename :
1548184
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2635777
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