• DocumentCode
    2635777
  • Title

    Room temperature Si laser at Si indirect-bandgap energy by electrical pumping

  • Author

    Lin, Ching-Fuh ; Liang, Eih-Zhe ; Huang, Chu-Ting ; Lin, Kung-An ; Shu, Shiu-Jia

  • Author_Institution
    Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2005
  • fDate
    22-28 Oct. 2005
  • Firstpage
    672
  • Lastpage
    673
  • Abstract
    Room-temperature lasing actions from Si by continuous-wave electrical pumping are demonstrated. Nanoparticle-modified metal-oxide-Si structures is used. Lasing occurs at the Si indirect-bandgap energy with threshold current 56 mA.
  • Keywords
    MIS devices; elemental semiconductors; energy gap; nanoparticles; semiconductor lasers; silicon; silicon compounds; 293 to 298 K; 56 mA; Si; Si indirect-bandgap energy; Si laser; Si-SiO2; continuous-wave pumping; electrical pumping; metal-oxide-Si structures; nanoparticle; room temperature lasing; Laser excitation; Nanoparticles; Paints; Pump lasers; Silicon; Silver; Spontaneous emission; Stimulated emission; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-9217-5
  • Type

    conf

  • DOI
    10.1109/LEOS.2005.1548184
  • Filename
    1548184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2635777