DocumentCode
2635780
Title
Current overshoot during set and reset operations of resistive switching memories
Author
Chen, An
Author_Institution
Strategic Technol. Group, GLOBALFOUNDRIES, Sunnyvale, CA, USA
fYear
2012
fDate
15-19 April 2012
Abstract
Low switching current is required for low-power operation of resistive switching memories. Current overshoot during set switching is caused by parasitic capacitance, which may be minimized by effective switching control and reduction of parasitic effects. A different form of current overshoot is also observed during reset switching, where devices go through a transient resistance-reduction process before the reset switching occurs. Reset current overshoot increases actual reset power. Current overshoot has significant impact on the reliability and switching power of resistive switching memories.
Keywords
integrated circuit reliability; random-access storage; switching circuits; transient analysis; RRAM; low switching current; parasitic capacitance; parasitic effect reduction; reliability; reset current overshoot; reset operations; resistive switching memories; set operations; set switching; switching control; transient resistance-reduction process; Parasitic capacitance; Resistance; Resistors; Switches; Switching circuits; Transient analysis; Transistors; RRAM; current overshoot; parasitics;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4577-1678-2
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2012.6241919
Filename
6241919
Link To Document