• DocumentCode
    2635780
  • Title

    Current overshoot during set and reset operations of resistive switching memories

  • Author

    Chen, An

  • Author_Institution
    Strategic Technol. Group, GLOBALFOUNDRIES, Sunnyvale, CA, USA
  • fYear
    2012
  • fDate
    15-19 April 2012
  • Abstract
    Low switching current is required for low-power operation of resistive switching memories. Current overshoot during set switching is caused by parasitic capacitance, which may be minimized by effective switching control and reduction of parasitic effects. A different form of current overshoot is also observed during reset switching, where devices go through a transient resistance-reduction process before the reset switching occurs. Reset current overshoot increases actual reset power. Current overshoot has significant impact on the reliability and switching power of resistive switching memories.
  • Keywords
    integrated circuit reliability; random-access storage; switching circuits; transient analysis; RRAM; low switching current; parasitic capacitance; parasitic effect reduction; reliability; reset current overshoot; reset operations; resistive switching memories; set operations; set switching; switching control; transient resistance-reduction process; Parasitic capacitance; Resistance; Resistors; Switches; Switching circuits; Transient analysis; Transistors; RRAM; current overshoot; parasitics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2012 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4577-1678-2
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2012.6241919
  • Filename
    6241919