DocumentCode
2635793
Title
Monolithic integration of Sb-based photopumped lasers on Si
Author
Balakrishnan, G. ; Huang, S. ; Khoshakhlagh, A. ; Dawson, L.R. ; Xin, Y.C. ; Lester, L. ; Huffaker, D.L.
Author_Institution
New Mexico Univ., Albuquerque, NM, USA
fYear
2005
fDate
22-28 Oct. 2005
Firstpage
674
Abstract
This study demonstrates monolithic integration and filamentary photopumped lasing from an InGaSb quantum well based laser structure. The device is grown on Si(100) using an AlSb quantum dot nucleation layer.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; monolithic integrated circuits; nucleation; optical pumping; quantum well lasers; semiconductor growth; AlSb quantum dot nucleation; AlSb-Si; InGaSb; InGaSb quantum well laser; Sb-based lasers; Si; Si(100); filamentary photopumping; monolithic integration; photopumped lasers; Capacitive sensors; Gallium arsenide; III-V semiconductor materials; Light emitting diodes; Monolithic integrated circuits; Optical materials; Quantum dot lasers; Superlattices; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548185
Filename
1548185
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