Title :
Monolithic integration of Sb-based photopumped lasers on Si
Author :
Balakrishnan, G. ; Huang, S. ; Khoshakhlagh, A. ; Dawson, L.R. ; Xin, Y.C. ; Lester, L. ; Huffaker, D.L.
Author_Institution :
New Mexico Univ., Albuquerque, NM, USA
Abstract :
This study demonstrates monolithic integration and filamentary photopumped lasing from an InGaSb quantum well based laser structure. The device is grown on Si(100) using an AlSb quantum dot nucleation layer.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; monolithic integrated circuits; nucleation; optical pumping; quantum well lasers; semiconductor growth; AlSb quantum dot nucleation; AlSb-Si; InGaSb; InGaSb quantum well laser; Sb-based lasers; Si; Si(100); filamentary photopumping; monolithic integration; photopumped lasers; Capacitive sensors; Gallium arsenide; III-V semiconductor materials; Light emitting diodes; Monolithic integrated circuits; Optical materials; Quantum dot lasers; Superlattices; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548185
