Total ionizing dose effects on ultra thin buried oxide floating body memories

Author

Mahatme, N.N. ; Schrimpf, R.D. ; Reed, R.A. ; Bhuva, B.L. ; Griffoni, A. ; Simoen, E. ; Aoulaiche, M. ; Linten, D. ; Jurczak, M. ; Groeseneken, G.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

fYear

2012

fDate

15-19 April 2012

Abstract

The total-ionizing-dose response of 1-transistor floating body memory cells is investigated. Factors affecting the robustness of these novel devices for high reliability applications in space environments are investigated. Memory failure is shown to result from radiation-induced threshold voltage shifts and increased leakage. Results from this work can also be used to uncover the effects of process and transistor level degradation on memory performance.

Keywords

MOSFET; integrated circuit reliability; radiation hardening (electronics); random-access storage; 1-transistor floating body memory cells; memory failure; radiation-induced threshold voltage shifts; reliability applications; space environments; total-ionizing dose effects; transistor level degradation; ultrathin buried oxide floating body memories; Charge carrier processes; Couplings; Logic gates; Radiation effects; Silicon; Threshold voltage; Time measurement; Floating Body Random Access Memory (FBRAM); Total ionizing dose (TID); Ultra Thin Buried Oxide (UTBOX); radiation effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241920

Filename

6241920