Title :
Volcano effect in open through silicon via (TSV) technology
Author :
Kraft, J. ; Stückler, E. ; Cassidy, C. ; Niko, W. ; Schrank, F. ; Wachmann, E. ; Gspan, C. ; Hofer, F.
Author_Institution :
Austriamicrosystems AG, Unterpremstätten, Austria
Abstract :
Through Silicon Via (TSV) technology, to serve as electrical connection between metallization layers on the front and backside of the same wafer, has been developed by austriamicrosystems AG. During the development phase, defects were found that could be assigned to an established defect type known as “contact liner volcano”. To our knowledge this is the first time that such a volcano formation is reported from the inside of a TSV.
Keywords :
chemical vapour deposition; integrated circuit metallisation; three-dimensional integrated circuits; TSV; austriamicrosystems AG; chemical vapor deposition; contact liner volcano; defect type; electrical connection; metallization layers; open through silicon via technology; volcano effect; volcano formation; Metallization; Polymers; Scanning electron microscopy; Silicon; Through-silicon vias; Tin; Volcanoes; Through Silicon Via; TiN liner; volcano;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241924
