DocumentCode
2635927
Title
Volcano effect in open through silicon via (TSV) technology
Author
Kraft, J. ; Stückler, E. ; Cassidy, C. ; Niko, W. ; Schrank, F. ; Wachmann, E. ; Gspan, C. ; Hofer, F.
Author_Institution
Austriamicrosystems AG, Unterpremstätten, Austria
fYear
2012
fDate
15-19 April 2012
Abstract
Through Silicon Via (TSV) technology, to serve as electrical connection between metallization layers on the front and backside of the same wafer, has been developed by austriamicrosystems AG. During the development phase, defects were found that could be assigned to an established defect type known as “contact liner volcano”. To our knowledge this is the first time that such a volcano formation is reported from the inside of a TSV.
Keywords
chemical vapour deposition; integrated circuit metallisation; three-dimensional integrated circuits; TSV; austriamicrosystems AG; chemical vapor deposition; contact liner volcano; defect type; electrical connection; metallization layers; open through silicon via technology; volcano effect; volcano formation; Metallization; Polymers; Scanning electron microscopy; Silicon; Through-silicon vias; Tin; Volcanoes; Through Silicon Via; TiN liner; volcano;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4577-1678-2
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2012.6241924
Filename
6241924
Link To Document