Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs

Author

Toledano-Luque, M. ; Kaczer, B. ; Simoen, E. ; Degraeve, R. ; Franco, J. ; Roussel, Ph J. ; Grasser, T. ; Groeseneken, G.

Author_Institution

Imec, Leuven, Belgium

fYear

2012

fDate

15-19 April 2012

Abstract

The correlation of discrete gate and drain current fluctuations is revealed in nanoscaled SiON pFETs and nFETs, demonstrating that discrete trapping and detrapping events in the same single states are responsible of both I_D and I_G random telegraph noise (RTN). The high and low gate current I_G-RTN levels are independent of temperature but the switching rates thermally activated indicating that the trapping and detrapping events are consistent with nonradiative multiphonon theory.

Keywords

MOSFET; MOSFET; RTN; discrete gate fluctuations; drain current fluctuations; drain currents; gate currents; high-gate current RTN levels; low-gate current RTN levels; nanoscaled nFET; nanoscaled pFET; nonradiative multiphonon theory; random telegraph noise; single detrapping effects; Charge carrier processes; Correlation; Current measurement; Fluctuations; Leakage current; Logic gates; Nanoscale devices; Gate current RTN; ID-RTN; IG-RTN; MOSFET; Random Telegraph Noise current RTN; SiON; drain current RTN; gate leakage current; reliability; variability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241935

Filename

6241935